| 000 | 01263nam a2200277 a 4500 | ||
|---|---|---|---|
| 999 |
_c79 _d79 |
||
| 001 | 18296 | ||
| 003 | BD-DhAAL | ||
| 008 | 090405s1994 nyua b 001 0 eng d | ||
| 010 | _a 92020705 | ||
| 020 | _a047185641X (acid-free paper) | ||
| 040 |
_aDLC _cDLC _dDLC _dBD-DhAAL |
||
| 082 | 0 | 0 |
_a621.38152 _220 |
| 100 | 1 |
_aChang, C. Y., _d1937- _929464 |
|
| 245 | 1 | 0 |
_aGaAs high-speed devices : _bphysics, technology, and circuit applications / _cC.Y. Chang, Francis Kai. |
| 260 |
_aNew York : _bWiley, _cc1994. |
||
| 300 |
_axiv, 612 pages : _billustrations ; _c27 cm. |
||
| 500 | _a"A Wiley Interscience publication." | ||
| 504 | _aIncludes bibliographical references and index. | ||
| 650 | 0 |
_aGallium arsenide semiconductors. _929465 |
|
| 650 | 0 |
_aIntegrated circuits. _929466 |
|
| 700 | 1 |
_aKai, Francis, _d1956- _929467 |
|
| 942 |
_2ddc _cBK |
||