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Eksport udført — 
Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Bibliografiske detaljer
Main Authors: Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Andre forfattere: Bhuian, Dr. Mohammed Belal Hossain
Format: Thesis
Sprog:English
Udgivet: BRAC University 2015
Fag:
Electrical and electronic engineering
Simulation
Online adgang:http://hdl.handle.net/10361/4330
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Internet

http://hdl.handle.net/10361/4330

Lignende værker

  • Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures
    af: Ahsan, Md. Galib
    Udgivet: (2016)
  • Optical and Digital Gallium Arsenide Technologies for Signal Processing Applications
  • High Mobility and Quantum Well Transistors
    af: Hellings
    Udgivet: (2013)
  • Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
    af: Afsin, Muntasirul Haque, et al.
    Udgivet: (2017)
  • Microwave Integrated Circuit Conference (EuMIC), European (Formerly European Gallium Arsenide and Other Semiconductors Application Symposium - EGASS)

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