Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Dades bibliogràfiques
Autors principals:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Altres autors:	Bhuian, Dr. Mohammed Belal Hossain
Format:	Thesis
Idioma:	English
Publicat:	BRAC University 2015
Matèries:	Electrical and electronic engineering Simulation
Accés en línia:	http://hdl.handle.net/10361/4330

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