Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Podrobná bibliografie
Hlavní autoři: Afsin, Muntasirul Haque, Kabir, Shahriar, Siddiqui, Aminul Haque
Další autoři: Bhuian, Dr.Mohammad Belal Hossain
Médium: Diplomová práce
Jazyk:English
Vydáno: BRAC University 2017
Témata:
Quantum Well Field-Effect Transistor (QWFET)
Electrical and electronic engineering
On-line přístup:http://hdl.handle.net/10361/7696

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