Temperature dependence of the transient characteristics in NPT IGBT using linear and parabolic model
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
| Autors principals: | Tania, Shoulin, Saha, Dipraj, Faiza, Fahmida |
|---|---|
| Altres autors: | Das, Avijit |
| Format: | Thesis |
| Idioma: | English |
| Publicat: |
BRAC University
2017
|
| Matèries: | |
| Accés en línia: | http://hdl.handle.net/10361/7734 |
Ítems similars
-
Investigation into IGBT transient characteristics and calculation of switching power loss
per: Hasan, Rifatul, et al.
Publicat: (2017) -
Transient anode voltage modeling of IGBT and its carrier lifetime dependence
per: Das, Avijit, et al.
Publicat: (2018) -
Transient anode voltage modeling of IGBT and its base doping profile investigation
per: Das, Avijit, et al.
Publicat: (2016) -
Transient switch-on collector current analysis in punch-through IGBT
per: Islam, Md. Akhirul, et al.
Publicat: (2017) -
An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
per: Saif, Omar, et al.
Publicat: (2017)