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  1. 1
    Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor
    Subjects: “…Doping…”
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    Conference paper
  2. 2
    Transient anode voltage modeling of IGBT and its base doping profile investigation
    by Das, Avijit, Md Ziaur Rahman, Khan
    Published 2016
    Subjects: “…Base doping concentration…”
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    Conference paper
  3. 3
    Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs /
    by Liu, William
    Published 1999
    "A Wiley-Interscience publication."
    Subjects: “…Modulation-doped field-effect transistors.…”
    Book
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