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Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Bibliografiska uppgifter
Huvudupphovsmän: Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Övriga upphovsmän: Bhuian, Dr. Mohammed Belal Hossain
Materialtyp: Lärdomsprov
Språk:English
Publicerad: BRAC University 2015
Ämnen:
Electrical and electronic engineering
Simulation
Länkar:http://hdl.handle.net/10361/4330
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http://hdl.handle.net/10361/4330

Liknande verk

  • Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures
    av: Ahsan, Md. Galib
    Publicerad: (2016)
  • Optical and Digital Gallium Arsenide Technologies for Signal Processing Applications
  • High Mobility and Quantum Well Transistors
    av: Hellings
    Publicerad: (2013)
  • Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
    av: Afsin, Muntasirul Haque, et al.
    Publicerad: (2017)
  • Microwave Integrated Circuit Conference (EuMIC), European (Formerly European Gallium Arsenide and Other Semiconductors Application Symposium - EGASS)

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