Transient anode voltage modeling of IGBT and its base doping profile investigation

Transient anode voltage modeling of IGBT and its base doping profile investigation

This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electron...

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Bibliografiska uppgifter
Huvudupphovsmän: Das, Avijit, Md Ziaur Rahman, Khan
Övriga upphovsmän: Department of Electrical and Electronic Engineering, BRAC University
Materialtyp: Conference paper
Språk:English
Publicerad: © 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Ämnen:
Base doping concentration
Carrier storage region
Minority carrier lifetime
Parabolic approximation
Transient anode voltage
Länkar:http://hdl.handle.net/10361/6900
Beskrivning
Sammanfattning:This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICCITechn.2015.7488054

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