Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect

Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect

This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The confere...

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Những tác giả chính: Mondol, Raktim Kumar, Hassan, Asif S., Hasan, Rifat
Tác giả khác: Department of Electrical and Electronic Engineering
Định dạng: Conference Paper
Ngôn ngữ:English
Được phát hành: © 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Những chủ đề:
Bandgap
Classical capacitance
Edge effect
Gate delay
Graphene nanoribbon
Quantum capacitance
Strain
Truy cập trực tuyến:http://hdl.handle.net/10361/6973

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http://hdl.handle.net/10361/6973

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