Analysis of bulk negative capacitance field effect transistor

Analysis of bulk negative capacitance field effect transistor

This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Podrobná bibliografie
Hlavní autoři:	Rahman, Towfiqur, Khan, Antara Fairooz, Nawal, Nowshin
Další autoři:	Noor, Samantha Lubaba
Médium:	Diplomová práce
Jazyk:	English
Vydáno:	BRAC University 2017
Témata:	NCFET MOSFET structure Transistor Shockley-Read Lombardi CVT TCAD model
On-line přístup:	http://hdl.handle.net/10361/8625

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