Analysis of bulk negative capacitance field effect transistor

Analysis of bulk negative capacitance field effect transistor

This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

מידע ביבליוגרפי
Main Authors:	Rahman, Towfiqur, Khan, Antara Fairooz, Nawal, Nowshin
מחברים אחרים:	Noor, Samantha Lubaba
פורמט:	Thesis
שפה:	English
יצא לאור:	BRAC University 2017
נושאים:	NCFET MOSFET structure Transistor Shockley-Read Lombardi CVT TCAD model
גישה מקוונת:	http://hdl.handle.net/10361/8625

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